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KSC2881
KSC2881
Power Amplifier
* * * * Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201
1
SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 800 160 500 1,000 150 -55 ~ 150 Units V V V mA mA mW mW C C
* Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10A, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VBE=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz 120 30 80 Min. 120 5 100 100 240 1.0 1.0 V V MHz pF Typ. Max. Units V V nA nA
Cob
hFE Classification
Classification hFE O 80 ~ 160 Marking Y 120 ~ 240
SCX
hFE grade
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2881
Typical Characteristics
0.8
1.0
IB = 50mA
IB = 20mA IB = 10mA
VCE = 5V
IC [mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
0.8
0.6
IB = 5mA
0.6
0.4
IB = 3mA
0.4
IB = 2mA
0.2
0.2
IB = 1mA
0.0 0 4 8 12 16
0.0 0.0
0.2
0.4
0.6
0.8
1.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE[mV], SATURATION VOLTAGE
Figure 1. Static Characterisitcs
Figure 2. Base-Emitter On Voltage
1000
1
VCE(sat) [V], SATURATION VOLTAGE
VCE = 5 V
IC = 10 IB
hFE, DC CURRENT GAIN
100
0.1
10 1 10 100 1000
0.01 1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Collector-Emitter Saturation Voltage
1.6
10000
1.2
IC [mA], COLLECTOR CURRENT
IC MAX. (Pulse)
1000
Ta = 25 C Single Pulse
10 ms 1 ms
o
PC [W], POWER DISSIPATION
Mounted on Ceramic Board (250 mm x 0.8 mm)
2
IC MAX. (DC) 100 ms
100
0.8
0.4
10
0.0 0 50
o
100
150
200
1 0.1
1
10
100
1000
Ta [ C], AMBIENT TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Power Derating
Figure 6. Safe Operating Area
(c)2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2881
Package Dimensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40 +0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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